Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-01-09
2007-01-09
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S189030, C365S154000, C257SE27098
Reexamination Certificate
active
10905283
ABSTRACT:
A memory cell for a static random access memory (SRAM) is disclosed that can be programmed to have a one-bit cell or a multi-bit cell (i.e, including two or more latches) according to a desired amount of cell current. For lower current needs, the memory cell can incorporate a single bit-element, while for higher current needs the memory cell can incorporate two or more bit-elements. An exemplary static random access memory device includes a memory cell having one or more bit-elements, such as bistable latches. Access devices, such as pass transistors, are coupled between each of the bit-elements and a bit line. A word line is coupled to the control terminal of each of the pass transistors for controlling communication between the bit-elements and the bit line.
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Chen Kun Lung
Hsieh Chen-Hui
Baker & McKenzie LLP
Elms Richard
Taiwan Semiconductor Manufacturing Company , Ltd.
Wendler Eric J.
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