Static memory cell with spaced apart conducting layers

Details Static memory cell with spaced apart conducting layers Static memory cell with spaced apart conducting layers

1996-02-22

1997-04-29

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Semiconductive

365160, 365161, 257295, G11C 1134

Patent

active

056255896

ABSTRACT:
A memory cell comprises at least three conducting layers (20) spaced apart by insulating layers (10), a first voltage application means (24) for applying a predetermined voltage between first and third conducting layers (20a, 20c) of the at least three conducting layers, no tunneling current flowing directly between the first and third conducting layers, and a second voltage application means (5) connected to a second conducting layer (20b) of at least three conducting layers, a tunneling current being able to flow between the first and second conducting layers and between the second and third conducting layers. Within these conducting layers (20), quantum-mechanical confinement of free electrons has been made.

REFERENCES:
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5323344 (1994-06-01), Katayama et al.
patent: 5420819 (1995-05-01), Pohm
Y. Kayama and D. C. Tsui, "Lumped circuit model of two-dimensional to two-dimensional tunneling transistors", Appl. Phys. Lett. 62, 2563 (1993).

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