Stack capacitor of memory device and fabrication method thereof

Details Stack capacitor of memory device and fabrication method thereof Stack capacitor of memory device and fabrication method thereof

2009-12-17

2011-12-27

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S397000

Reexamination Certificate

active

08084323

ABSTRACT:
The invention provides a method for forming a stack capacitor of a memory device, including providing a substrate, forming a patterned sacrificial layer with a plurality of first openings over the substrate, conformally forming a first conductive layer on the patterned sacrificial layer and in the first openings, forming a second conductive layer on the first conductive layer to seal the first openings with a void formed therein, removing a portion of the first and second conductive layers to expose the patterned sacrificial layer, and removing at least a portion of the patterned sacrificial layer to form bottom cell plates.

REFERENCES:
patent: 7459745 (2008-12-01), Lee et al.

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