Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-03-02
2008-12-16
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S226000
Reexamination Certificate
active
07466581
ABSTRACT:
An array of static random access memory (SRAM) cells arranged in a plurality of rows and a plurality of columns includes a plurality of VSS lines connected to VSS nodes of the SRAM cells, with each VSS line connected to the SRAM cells in a same column. The plurality of VSS lines includes a first VSS line connected to a first column of the SRAM cells; and a second VSS line connected to a second column of the SRAM cells, wherein the first and the second VSS lines are disconnected from each other.
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Zhang, K., et al., A 3-GHZ 70-Mb SRAM in 65-nm CMOS Technology With Integrated Column-Based Dynamic Power Supply, IEEE Journal of Solid-State Circuits, Jan. 2006, pp. 146-151, vol. 41, No. 1, IEEE.
Chen Yen-Huei
Huang Huai-Ying
Wang Ping-Wei
Wu Jui-Jen
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Michael T
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