4. Static information storage and retrieval
  5. Systems using particular element
  6. Flip-flop

Huai-Ying Huang

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Memory device with an asymmetric layout structure

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell with improved layout designs

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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SRAM design with separated VSS

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2229777

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