Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1989-01-26
1990-10-16
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419217, 2041923, 20429806, 20429808, C23C 1442, C23C 1454
Patent
active
049632396
ABSTRACT:
A sputtering process of a substrate biasing system and an apparatus for carrying out the same, capable of forming a film in satisfactory surface coverage over stepped underlying layer. The present invention solves problems in the quality of films formed by the conventional sputtering process of a substrate biasing system by regulating the bias potential of a substrate on which a film is to be formed so that the kinetic energy of ions of a sputtering gas falling on the substrate is varied periodically. The bias potential is regulated by periodically varying the amplitude of the output of a radio frequency (or dc) bias power supply or by changing the duty factor of a voltage pulse stream of the output of the radio frequency (or dc) bias power supply.
REFERENCES:
patent: 3732158 (1973-05-01), Przybyszewski et al.
patent: 4717462 (1988-01-01), Homma et al.
patent: 4747926 (1988-05-01), Shimizu et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
Fujita Shoyo
Kamei Tsuneaki
Kawahito Tsuneyoshi
Kobayashi Shigeru
Nakamura Hiroshi
Hitachi , Ltd.
Weisstuch Aaron
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