Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-13
2007-11-13
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21477, C257SE21478
Reexamination Certificate
active
10915139
ABSTRACT:
An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.
REFERENCES:
patent: 5171412 (1992-12-01), Talieh et al.
patent: 6179973 (2001-01-01), Lai et al.
patent: 6184137 (2001-02-01), Ding et al.
patent: 6197167 (2001-03-01), Tanaka
patent: 6274008 (2001-08-01), Gopalraja et al.
patent: 6423192 (2002-07-01), Wada et al.
patent: 6605197 (2003-08-01), Ding et al.
patent: 6709970 (2004-03-01), Park et al.
patent: 2002/0088716 (2002-07-01), Pavate et al.
patent: 2003/0000474 (2003-01-01), Voutsas et al.
patent: 2004/0013818 (2004-01-01), Moon et al.
patent: 2004/0121608 (2004-06-01), Shue et al.
patent: 2005/0205211 (2005-09-01), Singh et al.
patent: 0 878 843 (1998-11-01), None
patent: 403034317 (1991-02-01), None
Miyake et al., “Effects of atomic hydrogen on Cu reflow process”,Stress Induced Phenomena in Metallization, Fourth International Workshop, Tokyo, Japan, Jun. 1997, AIP Conference Proceedings 481, 1998, 419-423 pp.
Asamaki et al., “Filling of deep-sub-μm through holes and trenches by high vacuum planar magnetron sputter”,Electrochemistry, vol. 69, No. 10, 2001, 769-772 pp.
Chen Fusen
Ding Peijun
Miller Michael A.
Xu Zheng
Yang Hsien-Lung
Everhart Caridad
Guenzer Charles S.
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