Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-29
2008-08-12
Ngo, Ngan (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S266000, C438S593000, C257SE21422, C257SE21680
Reexamination Certificate
active
07410871
ABSTRACT:
A split gate type flash memory device and a method of manufacturing the split gate type flash memory device are disclosed. The split gate type flash memory device includes a silicon epitaxial layer formed in an active region of a bulk silicon substrate and a disturbance-preventing insulating film formed in the bulk silicon substrate between a source region and a drain region of the device. According to selected embodiments of the invention, the disturbance-preventing insulating film is formed using a Shallow Trench Isolation (STI) forming process.
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Ngo Ngan
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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