Spin device

Details Spin device Spin device

2011-07-05

2011-07-05

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07974120

ABSTRACT:
According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current.

REFERENCES:
patent: 6741496 (2004-05-01), Hannah et al.
Kotissek, P., et al., “Cross-sectional imaging of spin injection into a semiconductor,” Nature Physics 3, Oct. 7, 2007, pp. 872-877, Nature Publishing Group, http://www.nature.com/.
Li, Y., et al., “Inversion of Ferromagnetic Proximity Polarizationby MgO Interlayers,” Physical Review Letters, Jun. 13, 2008, pp. 237205-1-237205-4, vol. 100, No. 23, American Physical Society.

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