Specimen surface processing apparatus and surface processing...

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C216S037000, C216S041000, C216S044000, C216S047000, C216S049000, C216S058000, C156S922000, C134S001200, C134S001300, C134S001100, C438S706000, C438S710000, C438S714000, C438S723000, C438S725000, C438S905000, C438S907000

Reexamination Certificate

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11224967

ABSTRACT:
For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.

REFERENCES:
patent: 5681780 (1997-10-01), Mihara et al.
patent: 6743733 (2004-06-01), Kitsunai et al.
patent: 2001/0015175 (2001-08-01), Masuda et al.
patent: 2002/0123229 (2002-09-01), Ono et al.
patent: 09129594 (1997-05-01), None
patent: 10335309 (1998-12-01), None
patent: 11288920 (1999-10-01), None
S. Wolf, Silicon Processing for the VLSI Era, vol. 1, p. 567, Lattice Press (1986).

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