Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2008-04-08
2008-04-08
Deo, Duy-Vu N. (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S037000, C216S041000, C216S044000, C216S047000, C216S049000, C216S058000, C156S922000, C134S001200, C134S001300, C134S001100, C438S706000, C438S710000, C438S714000, C438S723000, C438S725000, C438S905000, C438S907000
Reexamination Certificate
active
11224967
ABSTRACT:
For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.
REFERENCES:
patent: 5681780 (1997-10-01), Mihara et al.
patent: 6743733 (2004-06-01), Kitsunai et al.
patent: 2001/0015175 (2001-08-01), Masuda et al.
patent: 2002/0123229 (2002-09-01), Ono et al.
patent: 09129594 (1997-05-01), None
patent: 10335309 (1998-12-01), None
patent: 11288920 (1999-10-01), None
S. Wolf, Silicon Processing for the VLSI Era, vol. 1, p. 567, Lattice Press (1986).
Kawahara Hironobu
Ohta Yoshiyuki
Oyama Masatoshi
Yoshida Tsuyoshi
Angadi Maki
Antonelli, Terry Stout & Kraus, LLP.
Deo Duy-Vu N.
Hitachi High-Technologies Corporation
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