Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-20
2008-05-20
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21180, C257SE21209
Reexamination Certificate
active
07374991
ABSTRACT:
In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device and a method of manufacturing the same, a SONOS memory device includes a semiconductor substrate, an insulating layer deposited on the semiconductor substrate, an active layer formed on a predetermined region of the insulating layer and divided into a source region, a drain region, and a channel region, a first side gate stack formed at a first side of the channel region, and a second side gate stack formed at a second side of the channel region opposite the first side of the channel region. In the SONOS memory device, at least two bits of data may be stored in each SONOS memory device, thereby allowing the integration density of the semiconductor memory device to be increased without increasing an area thereof.
REFERENCES:
patent: 6313503 (2001-11-01), Lee et al.
patent: 6396108 (2002-05-01), Krivokapic et al.
patent: 7045429 (2006-05-01), Liu et al.
patent: 2004/0227180 (2004-11-01), Huang et al.
Kim Chung-woo
Lee Jo-won
Ryu Won-il
Yoon Se-wook
Coleman W. David
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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