Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-04
2008-11-04
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000, C257S321000, C257S324000, C257SE29129, C257SE29300, C257SE29304
Reexamination Certificate
active
07446369
ABSTRACT:
A semiconductor memory device may include an intergate dielectric layer of a high-K dielectric material interposed between a floating gate and a control gate. With this intergate high-K dielectric in place, the memory device may be erased using Fowler-Nordheim tunneling.
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Co-pending U.S. Appl. No. 11/008,233, filed Dec. 10, 2004; entitled: “Memory Cell Having Enhanced High-K Dielectric”, by Joong Jeon et al., 30 pages.
Co-pending U.S. Appl. No. 11/049,855, filed Feb. 4, 2005; entitled: “Non-Volatile Memory Device With Improved Erase Speed”, by Joong Jeon et al., 22 pages.
Co-pending U.S. Appl. No. 11/086,310, filed Mar. 23, 2005; entitled: “High K Stack For Non-Volatile Memory”, by Wei Zheng et al., 21 pages.
Co-pending U.S. Appl. No. 11/128,392, filed May 13, 2005; entitled: “SONOS Memory Cell Having a Graded High-K Dielectric”, by Takashi Whitney Orimoto et al., 31 pages.
International Search Report for PCT/US2006/028813 Mailed Dec. 6, 2006, 3 pages.
Chan Simon S.
Jeon Joong
Orimoto Takashi Whitney
Sachar Harpreet K.
Shiraiwa Hidehiko
Advnaced Micro Devices, Inc.
Harrity & Harrity LLP
Liu Benjamin Tzu-Hung
Spansion LLC
Tran Minh-Loan
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