SOI substrate and manufacturing method thereof

Details SOI substrate and manufacturing method thereof SOI substrate and manufacturing method thereof

2005-04-05

2005-04-05

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S479000, C438S517000

Reexamination Certificate

active

06875643

ABSTRACT:
An SOI substrate having a partial SOI structure in which a buried insulating film having a predetermined area is formed via an active layer in a part of a silicon single crystal substrate in plan view by ion-implanting elements to the part of the substrate and then applying thereto a thermal processing, wherein a thickness of a peripheral edge portion of said buried insulating film is getting thinner toward a terminal edge of said buried insulating film.

REFERENCES:
patent: 5-82525 (1993-04-01), None
Hannon, Robert et al., “0.25 μm Merged Bulk DRAM and SOI Logic using Patterned SOI”, 2000 Symposium on VLSI Technology Digest of Technical Papers, pp. 66-67.

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