SOI chip with recess-resistant buried insulator and method...

Details SOI chip with recess-resistant buried insulator and method... SOI chip with recess-resistant buried insulator and method...

2008-05-13

2008-05-13

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S649000, C257SE21564, C257SE27112

Reexamination Certificate

active

07372107

ABSTRACT:
A semiconductor-on-insulator structure includes a substrate and a buried insulator stack overlying the substrate. The buried insulator stack includes a first dielectric layer and a recess-resistant layer overlying the first dielectric layer. A second dielectric layer can overlie the recess-resistant layer. A semiconductor layer overlying the buried insulator stack. Active devices, such as transistors and diodes, can be formed in the semiconductor layer.

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