Smart grading implant with diffusion retarding implant for...

Details Smart grading implant with diffusion retarding implant for... Smart grading implant with diffusion retarding implant for...

2008-01-22

2008-01-22

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S162000, C257SE21343

Reexamination Certificate

active

11086498

ABSTRACT:
A method of making an integrated circuit chip is provided, which combines a smart grading implant with a diffusion retarding implant, e.g., to improve short channel effect controllability and improve dopant grading in the source/drain regions. Using a smart grading implant, a relatively low-energy high-dose implant is performed before a relatively low-energy high-dose implant. Hence, a relatively high-energy low-dose implant of ions is performed into a source/drain region of a substrate. A diffusion retarding implant is performed into the source/drain region of the substrate. Then after performing the high-energy low-dose implant and the diffusion retarding implant (together, overlapping, or separately), a relatively low-energy high-dose implant of ions is performed into the source/drain region of the substrate.

REFERENCES:
patent: 4755865 (1988-07-01), Wilson et al.
patent: 5108935 (1992-04-01), Rodder
patent: 5576226 (1996-11-01), Hwang
patent: 5585286 (1996-12-01), Aronowitz et al.
patent: 5885861 (1999-03-01), Gardner et al.
patent: 5933721 (1999-08-01), Hause et al.
patent: 5959333 (1999-09-01), Gardner et al.
patent: 6225151 (2001-05-01), Gardner et al.
patent: 6268640 (2001-07-01), Park et al.
patent: 6271095 (2001-08-01), Yu
patent: 6458641 (2002-10-01), Tsukamoto
patent: 6475885 (2002-11-01), Sultan
patent: 6680250 (2004-01-01), Paton et al.
patent: 2004/0031970 (2004-02-01), Chakravarthi et al.
patent: 2004/0102013 (2004-05-01), Hwang et al.
patent: 2005/0110082 (2005-05-01), Cheng et al.
patent: 2006/0051922 (2006-03-01), Huang et al.
patent: 2006/0216900 (2006-09-01), Wang et al.
patent: 2006/0234455 (2006-10-01), Chen et al.

Affiliated with

Also associated with

Rating

Smart grading implant with diffusion retarding implant for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Smart grading implant with diffusion retarding implant for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Smart grading implant with diffusion retarding implant for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3941188