Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-11-08
2005-11-08
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S633000, C438S634000, C438S638000
Reexamination Certificate
active
06962869
ABSTRACT:
A method of protecting a low k dielectric layer that is preferably comprised of a material containing Si, O, C, and H is described. The dielectric layer is subjected to a gas plasma that is generated from a CXHYgas which is preferably ethylene. Optionally, hydrogen may be added to the CXHYgas. Another alternative is a two step plasma process involving a first plasma treatment of CXHYor CXHYcombined with H2and a second plasma treatment with H2. The modified dielectric layer provides improved adhesion to anti-reflective layers and to a barrier metal layer in a damascene process. The modified dielectric layer also has a low CMP rate that prevents scratch defects and an oxide recess from occurring next to the metal layer on the surface of the damascene stack. The plasma treatments are preferably done in the same chamber in which the dielectric layer is deposited.
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Bao Tien-I
Jang Syun-Ming
Ko Chung-Chi
Li Lih-Ping
Lu Hsin-Hsien
Estrada Michelle
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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