Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2005-08-02
2005-08-02
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S781000
Reexamination Certificate
active
06924242
ABSTRACT:
A method of forming a low-k dielectric material layer comprising the following steps. A first dielectric material sub-layer is formed over a substrate. The first dielectric material sub-layer is treated with an energy treatment to form a hardened layer on the upper surface of the first dielectric material sub-layer. A second dielectric material sub-layer is formed over the hardened layer, wherein the first dielectric sub-layer, the hardened layer and the second dielectric sub-layer comprise the low-k dielectric material layer. And a dual damascene structure and a dielectric material structure formed thereby.
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Bao Tien-I
Jang Syun-Ming
Ko Chung-Chi
Li Lih-Ping
Liu Al-Sen
Haynes and Boone LLP
Lee Calvin
Nelms David
Taiwan Semiconductor Manufacturing Company , Ltd.
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