Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2006-12-12
2006-12-12
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S185050, C365S185200, C365S185180
Reexamination Certificate
active
07149109
ABSTRACT:
A high density vertical single transistor gain cell is realized for DRAM operation. The gain cell includes a vertical transistor having a source region, a drain region, and a floating body region therebetween. A gate opposes the floating body region and is separated therefrom by a gate oxide on a first side of the vertical transistor. A floating body back gate opposes the floating body region on a second side of the vertical transistor and is separated therefrom by a dielectric to form a body capacitor.
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Dinh Son T.
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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