Single poly-emitter PNP using DWELL diffusion in a BiCMOS...

Details Single poly-emitter PNP using DWELL diffusion in a BiCMOS... Single poly-emitter PNP using DWELL diffusion in a BiCMOS...

2005-09-27

2005-09-27

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S369000, C438S527000, C257S370000

Reexamination Certificate

active

06949424

ABSTRACT:
A method of forming a bipolar transistor device, and more particularly a vertical poly-emitter PNP transistor, as part of a BiCMOS type manufacturing process is disclosed. The formation of the PNP transistor during a CMOS/DMOS fabrication process requires merely one additional mask to facilitate formation of a very small emitter in a portion of an N-type surface layer of a double diffused well (DWELL). Unlike conventional PNP transistors, a separate mask is not required to establish the base of the transistor as the transistor base is formed from a portion of the double diffused well and the DWELL includes a P-type body layer formed via implantation through the same opening in the same mask utilized to establish the N-type surface layer of the double diffused well. The base is also thin thus improving the transistor's frequency and gain.

REFERENCES:
patent: 5643809 (1997-07-01), Lien
patent: 5904536 (1999-05-01), Blair
patent: 6440812 (2002-08-01), Violette
patent: 6475850 (2002-11-01), Violette et al.
patent: 6589849 (2003-07-01), Lee
patent: 6803634 (2004-10-01), Okuno et al.
patent: 2002/0155673 (2002-10-01), Camalleri et al.

Affiliated with

Also associated with

Rating

Single poly-emitter PNP using DWELL diffusion in a BiCMOS... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single poly-emitter PNP using DWELL diffusion in a BiCMOS..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single poly-emitter PNP using DWELL diffusion in a BiCMOS... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3390943