Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-02
2010-11-16
Coleman, W. David (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S003000, C257SE27104
Reexamination Certificate
active
07834384
ABSTRACT:
Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.
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Furukawa Toshijaru
Hakey Mark C.
Holmes Steven J.
Horak David V.
Koburger, III Charles W.
Coleman W. David
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Kim Sun M
LandOfFree
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