4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Bulk effect device
  6. Bulk effect switching in amorphous material

Toshijaru Furukawa

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Memory device and method of manufacturing the device by...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Memory device and method of manufacturing the device by...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Memory device and method of manufacturing the device by...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Simultaneous conditioning of a plurality of memory cells...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Profile ID: LFUS-PAI-P-3115621

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