Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-08
2011-11-08
Thomas, Tom (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21396, C257SE21653, C257SE27112
Reexamination Certificate
active
08053823
ABSTRACT:
A structure is provided herein which includes an array of trench capacitors having at least portions disposed below a buried oxide layer of an SOI substrate. Each trench capacitor shares a common unitary buried capacitor plate which includes at least a portion of a first unitary semiconductor region disposed below the buried oxide layer. An upper boundary of the buried capacitor plate defines a plane parallel to a major surface of the substrate which extends laterally throughout the array of trench capacitors. In a particular embodiment, which starts from either an SOI or a bulk substrate, trenches of the array and a contact hole are formed simultaneously, such that the contact hole extends to substantially the same depth as the trenches. The contact hole preferably has substantially greater width than the trenches such that the conductive contact via can be formed simultaneously by processing used to form trench capacitors extending along walls of the trenches.
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Cheng Kangguo
Divakaruni Ramachandra
Ho Herbert L.
Radens Carl J.
International Business Machines - Corporation
Neff Daryl K.
Nguyen Dilinh
Schnurmann H. Daniel
Thomas Tom
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