Silicon wafer and process for producing it

Details Silicon wafer and process for producing it Silicon wafer and process for producing it

2007-06-26

2007-06-26

Gupta, Yogendra (Department: 1722)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

C257S611000, C257S617000, C117S013000, C117S015000, C117S017000, C117S019000

Reexamination Certificate

active

10893522

ABSTRACT:
A process for producing a single-crystal silicon wafer, comprises the following steps:producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, andheat treating the silicon wafer at a temperature which is selected to be such that an inequality (1)[O⁢⁢i]<[O⁢⁢i]eq⁢(T)⁢exp⁢⁢2⁢σSiO⁢2⁢Ωr⁢⁢k⁢⁢Tis satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi]eq(T) is a limit solubility of oxygen in silicon at a temperature T, σSiO2is the surface energy of silicon dioxide, Ω is a volume of a precipitated oxygen atom, r is a mean COP radius and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part of the time being exposed to an oxygen-containing atmosphere.

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