Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-18
1999-11-23
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
438639, H01L 2978
Patent
active
059905247
ABSTRACT:
During damascene formation of local interconnects in a semiconductor wafer, a punch-through region can be formed into the substrate as a result of exposing the oxide spacers that are adjacent to a transistor gate to one or more etching plasmas that are used to etch one or more overlying dielectric layers. A punch-through region can damage the transistor circuit. Improved, multipurpose spacers are provided to reduce the chances of over-etching. The multipurpose spacers are made of silicon oxime. The etching plasmas that are used to etch one or more overlying dielectric layers tend to have a higher selectivity ratio to the multipurpose spacers than to the conventional oxide spacers. Additionally, the multipurpose spacers do not tend to degrade the hot carrier injection (HCI) properties as would a typical nitride spacer.
REFERENCES:
patent: 5665993 (1997-09-01), Keller et al.
patent: 5719079 (1998-02-01), Yoo et al.
patent: 5831899 (1998-11-01), Wang et al.
T. Ogawa et al., "SiOxNy:H, high performance anti-reflective layer for current and future optical lithography" Journal: Proceeding of the SPIE-The International Society for Optical Engineering vol. 2197 p. 722-32. Jan. 1994.
Bell Scott A.
En William G.
Foote David K.
Karlsson Olov B.
Lyons Christopher F.
Advanced Micro Devices , Inc.
Chaudhuri Olik
Duy Mai Anh
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