Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices...

Details Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices... Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices...

2008-01-01

2008-01-01

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S185030

Reexamination Certificate

active

10999306

ABSTRACT:
Unit cells of silicon-oxide-nitride-oxide-silicon (SONOS) memory devices are provided. The unit cells include an integrated circuit substrate and a SONOS memory cell on the integrated circuit substrate. The SONOS memory cell includes a source region, a drain region and a gate contact. The integrated circuit substrate defines a trench between the source and drain regions and the gate contact is provided in the trench. A floor of the trench extends further into the integrated circuit substrate than lower surfaces of the source and drain regions. Related methods of fabricating SONOS memory cells are also provided.

REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 2003/0235076 (2003-12-01), Forbes
patent: 2004/0130934 (2004-07-01), Prall et al.
patent: 2003-318290 (2003-10-01), None
patent: 2003-0019585 (2003-03-01), None

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