Silicon on insulator devices having body-tied-to-source and...

Details Silicon on insulator devices having body-tied-to-source and... Silicon on insulator devices having body-tied-to-source and...

2008-03-21

2008-10-28

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S517000, C438S525000

Reexamination Certificate

active

07442614

ABSTRACT:
Methods of fabricating silicon on insulator devices having the body-tied-to-source are described. In an embodiment, a method of forming a transistor device comprises: providing a semiconductor topography comprising a gate conductor spaced above a semiconductor layer by a gate dielectric, dielectric sidewall spacers adjacent to sidewalls of the gate conductor, and source and drain junctions laterally spaced apart by a body region in the semiconductor layer; and implanting metallic species in a bottom region of the semiconductor layer to form a conductive implant region to electrically connect the source junction to the body region.

REFERENCES:
patent: 4899202 (1990-02-01), Blake et al.
patent: 5627097 (1997-05-01), Venkatesan et al.
patent: 7176527 (2007-02-01), Fukuda
patent: 7202118 (2007-04-01), Krivokapic
patent: 2002/0050614 (2002-05-01), Unnikrishnan
patent: 2002/0185691 (2002-12-01), Cabral et al.
patent: 2007/0187756 (2007-08-01), Snyder
patent: 1419521 (2002-05-01), None
Sleight et al., DC and Transient Characterization of Compact Schottky Body Contact Technology for SOI Transistors, IEEE Transactions on Electron Devices, vol. 46, No. 7, Jul. 1999, pp. 1451-1456.

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