Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-28
2008-12-09
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S570000, C438S758000
Reexamination Certificate
active
07462540
ABSTRACT:
A method for fabricating a semiconductor device includes the steps of implanting ions into a silicon carbide thin film (2) formed on a silicon carbide substrate (1), heating the silicon carbide substrate in a reduced pressure atmosphere to form a carbon layer (5) on the surface of the silicon carbide substrate, and performing activation annealing with respect to the silicon carbide substrate in an atmosphere under a pressure higher than in the step of forming the carbon layer (5) and at a temperature higher than in the step of forming the carbon layer (5).
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Chinese Office Action, with English translation, issued in Chinese Patent Application No. CN 200580003598, mailed Jan. 4, 2008.
Kitabatake Makoto
Kusumoto Osamu
Miyanaga Ryoko
Takahashi Kunimasa
Uchida Masao
McDermott Will & Emery LLP
Menz Laura M
Panasonic Corporation
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