Silicon-based RF system and method of manufacturing the same

Details Silicon-based RF system and method of manufacturing the same Silicon-based RF system and method of manufacturing the same

2011-06-21

2011-06-21

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S051000, C438S052000, C438S053000, C257SE25027, C257SE25031

Reexamination Certificate

active

07964427

ABSTRACT:
A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.

REFERENCES:
patent: 6696645 (2004-02-01), Margomenos et al.
patent: 2003/0020173 (2003-01-01), Huff et al.
patent: 2003/0134449 (2003-07-01), Huibers et al.
patent: 2004/0157367 (2004-08-01), Wong et al.

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