Silicide formation on SiGe

Details Silicide formation on SiGe Silicide formation on SiGe

2006-09-19

2008-10-07

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S388000, C257S486000, C257S616000, C257S742000, C257S754000, C257S757000, C257SE29193, C257SE21182, C438S933000

Reexamination Certificate

active

07432559

ABSTRACT:
A semiconductor structure includes a first silicon-containing layer comprising an element selected from the group consisting essentially of carbon and germanium wherein the silicon-containing layer has a first atomic percentage of the element to the element and silicon, a second silicon-containing layer comprising the element over the first silicon-containing layer, and a silicide layer on the second silicon-containing layer. The element in the second silicon-containing layer has a second atomic percentage of the element to the element and silicon, wherein the second atomic percentage is substantially lower than the first atomic percentage.

REFERENCES:
patent: 6881635 (2005-04-01), Chidambarrao et al.
patent: 2005/0242340 (2005-11-01), Chidambarrao et al.
patent: 2006/0054968 (2006-03-01), Lee
patent: 2006/0091490 (2006-05-01), Chen et al.
patent: 2006/0151787 (2006-07-01), Chen et al.
patent: 2006/0205194 (2006-09-01), Bauer

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