Silane etching process

Details Silane etching process Silane etching process

1997-07-03

1999-10-12

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438743, 156345, H01L 2100

Patent

active

059654635

ABSTRACT:
A low-temperature process for selectively etching oxide with high selectivity over silicon in a high-density plasma reactor. The principal etching gas is a hydrogen-free fluorocarbon, such as C.sub.2 F.sub.6 or C.sub.4 F.sub.8, to which is added a silane or similar silicon-bearing gas, e.g., the monosilane SiH.sub.4. The fluorocarbon and silane are added in a ratio within the range of 2 to 5, preferably 2.5 to 3. The process provides high polysilicon selectivity, high photoresist facet selectivity, and steep profile angles. Selectivity is enhanced by operating at high flow rates. Silicon tetrafluoride may be added to enhance the oxide etching rate. The process may operate at temperatures of chamber parts below 180.degree. C. and even down to 120.degree. C. The process enables the fabrication of a bi-level contact structure with a wide process window.

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patent: 5477975 (1995-12-01), Rice et al.
patent: 5556501 (1996-09-01), Collins et al.

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