Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With physical configuration of semiconductor surface to...
Patent
1997-10-20
1999-11-02
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With physical configuration of semiconductor surface to...
257493, 257 77, H01L 2358
Patent
active
059776056
ABSTRACT:
A semiconductor component, which comprises a pn junction, where both the p-conducting and the n-conducting layers of the pn junction constitute doped silicon carbide layers and where the edge of at least one of the conducting layers of the pn junction, exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.
REFERENCES:
patent: 3697829 (1972-10-01), Huth et al.
patent: 4211586 (1980-07-01), Fang
patent: 4242690 (1980-12-01), Temple
patent: 4375125 (1983-03-01), Byatt
patent: 4642669 (1987-02-01), Roggwiller et al.
patent: 4667393 (1987-05-01), Ferla et al.
patent: 4927772 (1990-05-01), Arthur et al.
patent: 4947218 (1990-08-01), Edmond et al.
patent: 5119148 (1992-06-01), Anderson et al.
patent: 5449925 (1995-09-01), Baliga et al.
patent: 5459089 (1995-10-01), Baliga
patent: 5650638 (1997-07-01), Harris et al.
patent: 5814840 (1998-09-01), Woodall et al.
Neudeck et al., 2000 V 6H--SiC P-N Junction Diodes Grown By Chemical Vapor Deposition, Appl. Phys. Lett. 64 (11), Mar. 14, 1994, pp. 1386-1388.
Bhatnagar et al., Comparison of 6H--SiC, 3C--SiC, and Si for Power Devices, IEEE Transactions on Electron Devices, vol. 40, No. 3, March 1993.
Bakowsky Mietek
Bijlenga Bo
Gustafsson Ulf
Harris Christopher
Savage Susan
Asea Brown Boveri AB
Guay John
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