SiC Semiconductor device comprising a pn Junction with a voltage

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With physical configuration of semiconductor surface to...

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257493, 257 77, H01L 2358

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active

059776056

ABSTRACT:
A semiconductor component, which comprises a pn junction, where both the p-conducting and the n-conducting layers of the pn junction constitute doped silicon carbide layers and where the edge of at least one of the conducting layers of the pn junction, exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.

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