Si seasoning to reduce particles, extend clean frequency,...

Details Si seasoning to reduce particles, extend clean frequency,... Si seasoning to reduce particles, extend clean frequency,...

2005-01-25

2005-01-25

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S311000, C438S905000, C438S913000, C427S452000, C427S567000, C427S585000, C427S588000, C427S099300

Reexamination Certificate

active

06846742

ABSTRACT:
Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011ions/cm3.

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