Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1998-07-01
2000-03-14
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
42725537, 4272557, 4274193, 438424, 438435, 438221, 438296, B05D 306, H01L 2176
Patent
active
060370181
ABSTRACT:
A method for filling shallow trenches 28 with a HDPCVD oxide 50. The invention has two liners: (a) a thermal oxide liner 36 and (b) an overlying conformal O.sub.3 -TEOS protective liner 40. The O.sub.3 -TEOS protective liner 40 prevents the HDPCVD oxide 50 from sputter damaging the trench sidewalls and the masking layer 24. The O.sub.3 -TEOS layer has novel process temperature (400 to 560.degree. C.) and low pressure (40 to 80 torr) that allows the O.sub.3 -TEOS layer to deposit uniformly over thermal oxide liner 36. The method begins by forming pad oxide layer 20 and a barrier layer 24 over a substrate. A trench 28 is formed in the substrate 10 through the pad oxide layer 20 and the barrier layer 24. A thermal oxide liner 36 and a protective O.sub.3 -TEOS liner layer 40 are formed over the walls of the trench 28 and over the barrier layer 24. Lastly, a high density plasma chemical vapor deposition (HDPCVD) oxide layer 50 is formed over the protective liner layer 40 filling the trench 28.
REFERENCES:
patent: 5116779 (1992-05-01), Iguchi
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5621241 (1997-04-01), Jain
patent: 5677231 (1997-10-01), Maniar et al.
patent: 5726090 (1998-03-01), Jang et al.
patent: 5731241 (1998-03-01), Jang et al.
patent: 5786262 (1998-07-01), Jang et al.
patent: 5817567 (1998-10-01), Jang et al.
patent: 5837612 (1998-11-01), Ajaria et al.
patent: 5895254 (1999-04-01), Huang et al.
Snag et al. "Comparative Evaluation of Gap-Fill Dielectrics in Shallow Trench Isolation for Sub 0.25.mu.m Technologies" IEDM, '96, p. 841-844.
Fu Chu-Yun
Jang Syun-Ming
Yu Chen-Hua Douglas
Ackerman Stephen B.
King Roy V.
Saile George O.
Stoffel William J.
Taiwan Semiconductor Maufacturing Company
LandOfFree
Shallow trench isolation filled by high density plasma chemical does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Shallow trench isolation filled by high density plasma chemical , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shallow trench isolation filled by high density plasma chemical will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-166943