Shallow trench isolation approach for improved STI corner...

Details Shallow trench isolation approach for improved STI corner... Shallow trench isolation approach for improved STI corner...

2002-10-22

2008-10-21

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S435000

Reexamination Certificate

active

07439141

ABSTRACT:
A method for performing shallow trench isolation during semiconductor fabrication that improves trench corner rounding is disclosed. The method includes etching trenches into a silicon substrate between active regions, and performing a double liner oxidation process on the trenches. The method further includes performing a double sacrificial oxidation process on the active regions, wherein corners of the trenches are substantially rounded by the four oxidation processes.

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Naoki Ueda et al. “A New Two-Step Round Oxidation STI Technology for Highly Reliable Flash Memory,”Extended Abstracts of the International Conference on Solid State Devices and Materials, Japan Society of Applied Physics. Tokyo, Japan, vol. 2001, Sep. 26, 2001, pp. 538-539.

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