Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-04
2006-07-04
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S289000, C438S302000
Reexamination Certificate
active
07071069
ABSTRACT:
A pocket implant process to reduce defects. We provide a gate structure, on a semiconductor substrate doped with a first conductivity type dopant. We perform a pocket amorphizing implantation procedure to form a pocket implant region adjacent to the gate structure, and an amorphous pocket region. Next, we perform a shallow amorphizing implant to form an amorphous shallow implant region. The amorphous shallow implant region being formed at a second depth above the amorphous pocket region. The substrate above the amorphous shallow implant region preferably remains crystalline. We perform a S/D implant procedure to form Deep S/D regions. We perform an anneal procedure preferably comprised of a first soak step and a second spike step to recrystalilze the amorphous shallow implant region and the amorphous pocket region, The defects created by the pocket implant are reduced by the shallow amorphous implant.
REFERENCES:
patent: 5675166 (1997-10-01), Ilderem et al.
patent: 5937293 (1999-08-01), Lee
patent: 6268640 (2001-07-01), Park et al.
patent: 6344405 (2002-02-01), Saha
patent: 6399452 (2002-06-01), Krishnan et al.
patent: 6465315 (2002-10-01), Yu
patent: 6475885 (2002-11-01), Sultan
patent: 6537886 (2003-03-01), Lee
patent: 6630385 (2003-10-01), Yu
patent: 6846708 (2005-01-01), Feudel et al.
patent: 2002/0001926 (2002-01-01), Noda
patent: 2003/0013260 (2003-01-01), Gossmann et al.
patent: 2003/0049917 (2003-03-01), Noda
patent: 2003/0096490 (2003-05-01), Borland et al.
Noda, “Evolution of end-of-range damage and transient enhanced diffusion of indium in Silicon”, Journal-of applied physics, vol. 91, #2 Jan. 15, 2002, pp. 639-645.
Yeh et al., Optimum halo structure for sub-0.1. m cMOSFETs, IEEE trans on electronic devices, vol. 48, # 10, Oct. 2001, pp. 2357-2362.
Lisebarger, et al., “Study of end of range loop interactions with B[sup+ ] implant damage using a boron doped diffusion layer”, J. Appl. Phys. 78 (4), Aug. 15, 1995, pp. 2298-2302.
Lu et al., “Reduction of secondary defect formation in MeV B+ ion-implanted Si(100)”, Appl. pHys. Lett, 655 (18), Oct 30, 1989, pp. 1838-1840.
Chor Eng Fong
Lee Hyeokjae
Quek Elgin
Tan Chung Foong
Chartered Semiconductor Manufacturing LTD
Perkins Pamela E
Smith Zandra V.
Stoffel William J.
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