Sequencing of the recipe steps for the optimal low-k HDP-CVD pro

Details Sequencing of the recipe steps for the optimal low-k HDP-CVD pro Sequencing of the recipe steps for the optimal low-k HDP-CVD pro

1997-06-03

1999-08-10

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438763, 438784, 427573, 427579, H01L 21316

Patent

active

059373237

ABSTRACT:
A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 .mu.m with an aspect ratio of up to 4.5:1.

REFERENCES:
patent: 4851370 (1989-07-01), Doklan et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4894352 (1990-01-01), Lane et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5013691 (1991-05-01), Lory et al.
patent: 5041311 (1991-08-01), Tsukune et al.
patent: 5156881 (1992-10-01), Okano et al.
patent: 5215787 (1993-06-01), Homma
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5288518 (1994-02-01), Homma
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5334552 (1994-08-01), Homma
patent: 5385763 (1995-01-01), Okano et al.
patent: 5399529 (1995-03-01), Homma
patent: 5413967 (1995-05-01), Matsuda et al.
patent: 5420075 (1995-05-01), Homma et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5661093 (1997-08-01), Ravi et al.
Chang et al. "Influences of Deposition Temperature on Thermal Stability and Moisture Resistance of Chemical Vapor Deposited Fluorinated Silicon Oxide by Using Indirect Fluorinating Precursor" vol. 69, No. 9, Aug. 26, 1996, pp. 1238-1240, XP000629115.
Shapiro, et al. "CVD of Fluorosilicate Glass for ULSI Applications" Thin Solid Films, vol. 270, No. 1/2, Dec. 1, 1995, pp. 503-507, XP000595259.
Shapiro et al., "Dual Frequency Plasma CVD Fluorosilicate Glass Water Absorption And Stability", DUMIC Conference, Feb. 1995, pp. 118-123.
Takeishi et al., "Stabilizing Dielectric Constants of Fluorine-Doped-Si02 Films by N20-Plasma Annealing", DUMIC Conference, Feb. 1995, pp. 257-259.
Carl et al., "The Effect of 0.sub.2 :C.sub.2 F.sub.6 Rations and Low Frequency Power On The Gap Fill Properties And Stability Of F-TEOS Films", DUMIC Conference, Feb. 1995, pp. 234-240.
Matsuda et al., "Dual Frequency Plasma CVD Fluorosilicate Glass Deposition For 0.25 .mu.m Interlevel Dielectrics", DUMIC Conference, Feb. 1995, pp. 22-28.
Qian et al., "High Density Plasma Deposition And Deep Submicron Gap Fill With Low Dielectric Constant SIOF Films", DUMIC Conference, Feb. 1995, pp. 50-56.
Fukada et al., "Preparation of SiOF Films with Low Dielectric Constant By ECR Plasma CVD", DUMIC Conference, Feb. 1995, pp. 43-49.
Ravi K. Laxman, "Low .epsilon. Dielectrics: CVD Fluorinated Silicon Dioxides", Semiconductor International, May 1995, pp. 71-74.
Hayasaka et al., "High-Quality And Low Dielectric constant Si0.sub.2 CVD Using High Density Plasma", Dry Process Symposium, Nov. 1994, pp. 163-168.
Musaka et al., "Single Step Gap Filling Technology For Subhalf Micron Metal Spacings On Plasma Enhanced TEOS/0.sub.2 Chemical Vapor Deposition System", Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, 1993, pp. 510-512.
Robles et al., "Effects of RF Frequency and Deposition Rates on the Moisture Resistance of PECVD TEOS-Based Oxide Films", vol. 92-1, ECS Extended Abstracts, p. 215, Abstract 129, May 1992.
Galiano et al., "Stress-Temperature Behavior of Oxide Films Used For Intermetal Dielectric Applications", VMIC Conference, Jun. 1992, pp. 100-106.
Yu et al., "Step Coverage Study of Peteos Deposition for Intermetal Dielectric Applications", VMIC Conference, Jun. 1990, pp. 166-172.
Chang et al., "Frequency Effects and Properties of Plasma Deposited Fluorinated Silicon Nitride", J. Vac. Sci. Technol. B6 (2) 1988, pp. 524-532.

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