Sense amplifier circuit in semiconductor memory device

Static information storage and retrieval – Read/write circuit – Precharge

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365233, G11C 1300

Patent

active

056778864

ABSTRACT:
There is provided in the present invention a signal generator which generates a bit line equalization signal and a signal generator which generates a sense amplifier equalization signal to control the bit line equalization circuit and the sense amplifier equalization circuit, respectively. The generated bit line equalization signal and sense amplifier equalization signal both have a voltage level that is at least about equal to, and preferably greater than, an external power supply voltage. The signals generated by these signal generators can thus be used by operating voltages which are much less than was previously possible.

REFERENCES:
patent: 4056811 (1977-11-01), Baker

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