Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-01
2011-03-01
Zarneke, David A (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S645000, C257SE23175
Reexamination Certificate
active
07897509
ABSTRACT:
A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
REFERENCES:
patent: 7732925 (2010-06-01), Okayama et al.
patent: 2003/0222354 (2003-12-01), Mastromatteo et al.
patent: 2006/0060945 (2006-03-01), Cho et al.
Akazawa Takashi
Kanemitsu Kenji
Kikuchi Takafumi
Tanaka Naotaka
Kilpatrick Townsend & Stockton LLP
Renesas Electronics Corp.
Wagner Jenny L
Zarneke David A
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