Semiconductor structure having an abrupt doping profile

Details Semiconductor structure having an abrupt doping profile Semiconductor structure having an abrupt doping profile

2006-06-27

2006-06-27

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S019000, C257S192000, C257S616000

Reexamination Certificate

active

07067855

ABSTRACT:
A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 Å from the first layer of greater than 1×1019P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET'S, and HBT's.

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