Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-02-23
2011-10-04
Dang, Phuc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S301000, C438S238000, C438S243000
Reexamination Certificate
active
08030707
ABSTRACT:
A method of forming a silicon-on-insulator (SOI) semiconductor structure in a substrate having a bulk semiconductor layer, a buried oxide (BOX) layer and an SOI layer. During the formation of a trench in the structure, the BOX layer is undercut. The method includes forming a dielectric material on the upper wall of the trench adjacent to the undercutting of the BOX layer and then etching the dielectric material to form a spacer. The spacer fixes the BOX layer undercut and protects it during subsequent steps of forming a bottle-shaped portion of the trench, forming a buried plate in the deep trench; and then forming a trench capacitor. There is also a semiconductor structure, preferably an SOI eDRAM structure, having a spacer which fixes the undercutting in the BOX layer.
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Cheng Kangguo
Lustig Naftali Eliahu
Yang Dae-won
Blecker Ira D.
Dang Phuc
International Business Machines - Corporation
Petrokaitis Joseph
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