Semiconductor structure

Details Semiconductor structure Semiconductor structure

2009-02-23

2011-10-04

Dang, Phuc (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S301000, C438S238000, C438S243000

Reexamination Certificate

active

08030707

ABSTRACT:
A method of forming a silicon-on-insulator (SOI) semiconductor structure in a substrate having a bulk semiconductor layer, a buried oxide (BOX) layer and an SOI layer. During the formation of a trench in the structure, the BOX layer is undercut. The method includes forming a dielectric material on the upper wall of the trench adjacent to the undercutting of the BOX layer and then etching the dielectric material to form a spacer. The spacer fixes the BOX layer undercut and protects it during subsequent steps of forming a bottle-shaped portion of the trench, forming a buried plate in the deep trench; and then forming a trench capacitor. There is also a semiconductor structure, preferably an SOI eDRAM structure, having a spacer which fixes the undercutting in the BOX layer.

REFERENCES:
patent: 6426252 (2002-07-01), Radens et al.
patent: 6590259 (2003-07-01), Adkisson et al.
patent: 6815749 (2004-11-01), Mandelman et al.
patent: 7195972 (2007-03-01), Chidambarrao et al.
patent: 7575970 (2009-08-01), Ho et al.
patent: 7608868 (2009-10-01), Lee et al.
patent: 2008/0064178 (2008-03-01), Ho et al.

Affiliated with

Also associated with

Rating

Semiconductor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4273165