Semiconductor structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S296000, C257S301000, C438S238000, C438S243000

Reexamination Certificate

active

08030707

ABSTRACT:
A method of forming a silicon-on-insulator (SOI) semiconductor structure in a substrate having a bulk semiconductor layer, a buried oxide (BOX) layer and an SOI layer. During the formation of a trench in the structure, the BOX layer is undercut. The method includes forming a dielectric material on the upper wall of the trench adjacent to the undercutting of the BOX layer and then etching the dielectric material to form a spacer. The spacer fixes the BOX layer undercut and protects it during subsequent steps of forming a bottle-shaped portion of the trench, forming a buried plate in the deep trench; and then forming a trench capacitor. There is also a semiconductor structure, preferably an SOI eDRAM structure, having a spacer which fixes the undercutting in the BOX layer.

REFERENCES:
patent: 6426252 (2002-07-01), Radens et al.
patent: 6590259 (2003-07-01), Adkisson et al.
patent: 6815749 (2004-11-01), Mandelman et al.
patent: 7195972 (2007-03-01), Chidambarrao et al.
patent: 7575970 (2009-08-01), Ho et al.
patent: 7608868 (2009-10-01), Lee et al.
patent: 2008/0064178 (2008-03-01), Ho et al.

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