Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-03-06
2007-03-06
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C257S295000
Reexamination Certificate
active
10844563
ABSTRACT:
A volatile memory element and a nonvolatile memory element, each of which is constituted of a field effect transistor, are formed on a single semiconductor chip. The volatile memory element includes a body region, a gate electrode, and two diffusion layer regions, and varies an amount of a current, flowing between the diffusion layer regions in applying a voltage to a gate electrode, in accordance with an amount of electric charge retained in the body region. The nonvolatile memory element includes diffusion layer regions, a gate electrode, and two memory function sections, and varies an amount of a current, flowing between the diffusion layer regions in applying a voltage to the gate electrode, in accordance with an amount of electric charge retained in the memory function sections. Thus, it is possible to form the volatile memory and the nonvolatile memory on a single chip with a simple process.
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Iwata Hiroshi
Shibata Akihide
Birch & Stewart Kolasch & Birch, LLP
Dinh Son T.
Sharp Kabushiki Kaisha
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