Semiconductor storage device, semiconductor device,...

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Reexamination Certificate

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C257S295000

Reexamination Certificate

active

10844563

ABSTRACT:
A volatile memory element and a nonvolatile memory element, each of which is constituted of a field effect transistor, are formed on a single semiconductor chip. The volatile memory element includes a body region, a gate electrode, and two diffusion layer regions, and varies an amount of a current, flowing between the diffusion layer regions in applying a voltage to a gate electrode, in accordance with an amount of electric charge retained in the body region. The nonvolatile memory element includes diffusion layer regions, a gate electrode, and two memory function sections, and varies an amount of a current, flowing between the diffusion layer regions in applying a voltage to the gate electrode, in accordance with an amount of electric charge retained in the memory function sections. Thus, it is possible to form the volatile memory and the nonvolatile memory on a single chip with a simple process.

REFERENCES:
patent: 5760435 (1998-06-01), Pan
patent: 5949711 (1999-09-01), Kazerounian
patent: 6222774 (2001-04-01), Tanzawa et al.
patent: 6348711 (2002-02-01), Eitan
patent: 6426532 (2002-07-01), Iwata et al.
patent: 6462364 (2002-10-01), Horiuchi
patent: 6721205 (2004-04-01), Kobayashi et al.
patent: 5-81072 (1993-11-01), None
patent: 09-116119 (1997-05-01), None
patent: 2001-156188 (2001-06-01), None
patent: 2001-196461 (2001-07-01), None
patent: 2001-230322 (2001-08-01), None
patent: 2002-246571 (2002-08-01), None
patent: 99/07000 (1999-02-01), None
patent: WO01/17030 (2001-03-01), None
patent: WO03/044868 (2003-05-01), None
patent: WO03/075358 (2003-09-01), None
patent: WO03/075359 (2003-09-01), None
patent: WO03/103058 (2003-12-01), None
patent: WO2004/034474 (2004-04-01), None

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