Semiconductor processing apparatus which is formed from...

Details Semiconductor processing apparatus which is formed from... Semiconductor processing apparatus which is formed from...

2010-02-19

2011-10-11

Group, Karl E (Department: 1731)

Compositions: ceramic

Ceramic compositions

Yttrium, lanthanide, actinide, or transactinide containing

C501S103000, C428S702000

Reexamination Certificate

active

08034734

ABSTRACT:
A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

REFERENCES:
patent: 5798016 (1998-08-01), Oehrlein et al.
patent: 5902763 (1999-05-01), Waku et al.
patent: 6123791 (2000-09-01), Han et al.
patent: 6352611 (2002-03-01), Han et al.
patent: 6383964 (2002-05-01), Nakahara et al.
patent: 6447937 (2002-09-01), Murakawa et al.
patent: 6492042 (2002-12-01), Morita et al.
patent: 6641697 (2003-11-01), Han et al.
patent: 6645585 (2003-11-01), Ozono
patent: 6682627 (2004-01-01), Shamouilian et al.
patent: 6773751 (2004-08-01), O'Donnell et al.
patent: 6776873 (2004-08-01), Sun et al.
patent: 6780787 (2004-08-01), O'Donnell
patent: 6783863 (2004-08-01), Harada et al.
patent: 6783875 (2004-08-01), Yamada et al.
patent: 6830622 (2004-12-01), O'Donnell et al.
patent: 6884516 (2005-04-01), Harada et al.
patent: 6916559 (2005-07-01), Murakawa et al.
patent: 6933254 (2005-08-01), Morita et al.
patent: 6942929 (2005-09-01), Han et al.
patent: 6983892 (2006-01-01), Noorbakhsh et al.
patent: 7137353 (2006-11-01), Saigusa et al.
patent: 7147749 (2006-12-01), Nishimoto et al.
patent: 7163585 (2007-01-01), Nishimoto et al.
patent: 7166166 (2007-01-01), Saigusa et al.
patent: 7166200 (2007-01-01), Saigusa et al.
patent: 7220497 (2007-05-01), Chang
patent: 7255898 (2007-08-01), O'Donnell et al.
patent: 7696117 (2010-04-01), Sun et al.
patent: 2001/0003271 (2001-06-01), Otsuki
patent: 2002/0009560 (2002-01-01), Ozono
patent: 2002/0018921 (2002-02-01), Yamada et al.
patent: 2003/0215643 (2003-11-01), Morita et al.
patent: 2004/0060657 (2004-04-01), Saigusa et al.
patent: 2004/0149210 (2004-08-01), Fink
patent: 2004/0191545 (2004-09-01), Han et al.
patent: 2004/0245089 (2004-12-01), Lawson
patent: 2004/0245098 (2004-12-01), Eckerson
patent: 2005/0037193 (2005-02-01), Sun et al.
patent: 2005/0056218 (2005-03-01), Sun et al.
patent: 2005/0123288 (2005-06-01), Ito et al.
patent: 2005/0227118 (2005-10-01), Uchimaru et al.
patent: 2005/0274320 (2005-12-01), Murugesh et al.
patent: 2005/0279457 (2005-12-01), Matsudo et al.
patent: 2006/0037536 (2006-02-01), Kobayashi et al.
patent: 2006/0040508 (2006-02-01), Ji et al.
patent: 2006/0042754 (2006-03-01), Yoshida et al.
patent: 2006/0043067 (2006-03-01), Kadkhodayan et al.
patent: 2006/0073354 (2006-04-01), Watanabe et al.
patent: 2007/0032072 (2007-02-01), Sidhwa
patent: 2008/0237543 (2008-10-01), Kobayashi et al.
patent: 1158072 (2001-11-01), None
patent: 1310466 (2003-05-01), None
patent: 2001181042 (2001-07-01), None
patent: 2002-087878 (2002-03-01), None
patent: 2002249864 (2002-09-01), None
patent: 2003146751 (2003-05-01), None
patent: 2005206421 (2005-08-01), None
European Search Report of corresponding EP Application Serial No. 08154940.4.
“Plasma Spray” SemiCon Precision Industries Inc. 2005. Jun. 16, 2007. http://www.semiconprecision.com/plasma.htm.
“Surface Preparation” SemiCon Precision Industries Inc. 2005. Jun. 16, 2007. http://www.semiconprecision.com/surface—prep.htm.

Affiliated with

Also associated with

Rating

Semiconductor processing apparatus which is formed from... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor processing apparatus which is formed from..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor processing apparatus which is formed from... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4281735