Semiconductor probe structure using impact-ionization metal...

Details Semiconductor probe structure using impact-ionization metal... Semiconductor probe structure using impact-ionization metal...

2011-03-29

2011-03-29

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S018000

Reexamination Certificate

active

07915109

ABSTRACT:
A method of manufacturing a probe includes: forming a first slant face of the probe through an anisotropic etching process using a first etching mask pattern formed on a silicon substrate; forming a first semiconductor electrode region; forming a second etching mask pattern in an opposite direction of the first etching mask pattern on the silicon substrate; forming a spacer layer on a side wall of the second etching mask pattern; forming a second slant face of the probe; forming a second semiconductor electrode region; forming a silicon oxide layer pattern on the resulting silicon substrate; forming spacer layers on both side walls of the silicon oxide layer pattern; and etching the silicon substrate to a predetermined depth.

REFERENCES:
patent: 2008/0200001 (2008-08-01), Clavelier et al.
patent: 2008/0220556 (2008-09-01), Ko et al.
patent: 2009/0026553 (2009-01-01), Bhuwalka et al.

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