Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-09-12
2006-09-12
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S693000, C257S701000, C257S783000, C257S787000, C257S793000
Reexamination Certificate
active
07105919
ABSTRACT:
A semiconductor package having an ultra thin thickness and a method of manufacturing the same are provided. The ultra thin semiconductor package comprises a circuit board in which a through hole is formed. A semiconductor chip is located in the through hole and a connecting element electrically connects the circuit board and the semiconductor chip. An epoxy molding compound (EMC) covers the semiconductor chip and the connecting element and a supporter having a thermal expansion coefficient similar to the EMC is attached inside the through hole on a lower surface of the semiconductor chip. An external connecting terminal is attached to at least one side of the circuit board. Because of the inclusion of the supporter, warpage of the semiconductor package resulting from the curing of the EMC is prevented.
REFERENCES:
patent: 5446620 (1995-08-01), Burns et al.
patent: 5972736 (1999-10-01), Malladi et al.
patent: 6395579 (2002-05-01), Tandy et al.
patent: 64-47058 (1989-02-01), None
Clark Jasmine
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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