Semiconductor package having semiconductor die with internal...

Details Semiconductor package having semiconductor die with internal... Semiconductor package having semiconductor die with internal...

2008-03-07

2011-12-27

Richards, N Drew (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Encapsulating

C257SE23019

Reexamination Certificate

active

08084302

ABSTRACT:
A semiconductor wafer is made by forming a first conductive layer over a sacrificial substrate, mounting a semiconductor die to the sacrificial substrate, depositing an insulating layer over the semiconductor die and first conductive layer, exposing the first conductive layer and contact pad on the semiconductor die, forming a second conductive layer over the insulating layer between the first conductive layer and contact pad, forming solder bumps on the second conductive layer, depositing an encapsulant over the semiconductor die, first conductive layer, and interconnect structure, and removing the sacrificial substrate after forming the encapsulant to expose the conductive layer and semiconductor die. A portion of the encapsulant is removed to expose a portion of the solder bumps. The solder bumps are sized so that each extends the same outside the encapsulant. The semiconductor die are stacked by electrically connecting the solder bumps.

REFERENCES:
patent: 6222260 (2001-04-01), Liang et al.
patent: 6750547 (2004-06-01), Jeung et al.
patent: 6774499 (2004-08-01), Yang
patent: 2004/0178495 (2004-09-01), Yean et al.

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