Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-11
2008-03-11
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S783000, C257S913000, C257SE21226, C257SE21639, C257SE23137
Reexamination Certificate
active
07342290
ABSTRACT:
A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.
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Burnham Jay S.
Elliott James R.
Gault Kenneth R.
Ishaq Mousa H.
Shank Steven M.
Estrada Michelle
International Business Machines - Corporation
Sabo, Esq. William D.
Scully , Scott, Murphy & Presser, P.C.
Stark Jarrett J
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