Semiconductor memory with improved memory block switching

Details Semiconductor memory with improved memory block switching Semiconductor memory with improved memory block switching

2009-08-10

2011-11-01

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

C365S148000, C365S163000

Reexamination Certificate

active

08050109

ABSTRACT:
A non-volatile memory core comprises one or more memory bays. Each memory bay comprises one or more memory blocks that include a grouping of non-volatile storage elements. In one embodiment, memory blocks in a particular memory bay share a group of read/write circuits. During a memory operation, memory blocks are transitioned into active and inactive states. The process of transitioning blocks from an inactive state to an active state includes enabling charge sharing between a memory block entering the active state and another memory block that was previously in the active state. This charge sharing improves performance and/or reduces energy consumption for the memory system.

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