Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-05-20
2008-05-20
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S189050
Reexamination Certificate
active
07376029
ABSTRACT:
A precharge circuit of a semiconductor memory device may include a precharge controller, a first precharge unit and a second precharge unit. The precharge controller may enable a first control signal in a precharge mode for a first operation, and may enable a second control signal in a precharge mode for a second operation. The first precharge unit may precharge a pair of I/O lines to a first voltage in response to the first control signal in the precharge mode for the first operation. The second precharge unit may precharge the pair of I/O lines to a second voltage lower than the first voltage in response to the second control signal in the precharge mode for the second operation.
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Jung Hyun-Taek
Kim Gyu-hong
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Tran Michael T
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