Semiconductor memory devices including offset active regions

Details Semiconductor memory devices including offset active regions Semiconductor memory devices including offset active regions

2005-10-06

2009-06-16

Quach, Tuan N. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257S506000, C257SE27084

Reexamination Certificate

active

07547936

ABSTRACT:
A semiconductor memory device may include a substrate having a plurality of active regions and a field isolation layer on the substrate surrounding the active regions of the substrate. Each of the plurality of active regions may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. The plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis, and active regions of adjacent columns may be offset in the direction of the second axis.

REFERENCES:
patent: 5391901 (1995-02-01), Tanabe
patent: 5519239 (1996-05-01), Chu
patent: 5604365 (1997-02-01), Kajigaya et al.
patent: 5734184 (1998-03-01), Andoh et al.
patent: 6151243 (2000-11-01), Kim
patent: 6291846 (2001-09-01), Ema et al.
patent: 6400596 (2002-06-01), Takemura et al.
patent: 6671198 (2003-12-01), Takemura et al.
patent: 6861698 (2005-03-01), Wang
patent: 2001/0002702 (2001-06-01), Takemura et al.
patent: 2002/0130345 (2002-09-01), Saigoh et al.
patent: 2002/0172070 (2002-11-01), Arimoto et al.
patent: 2004/0125636 (2004-07-01), Kurjanowicz et al.
patent: 2004/0141361 (2004-07-01), Tsukikawa et al.
patent: 2005/0173743 (2005-08-01), Sim et al.
patent: 1495906 (2004-05-01), None
patent: 05-235298 (1993-09-01), None
patent: 09-283718 (1997-10-01), None
patent: 11-186517 (1999-07-01), None
patent: 2003-273245 (2003-09-01), None
patent: 10-1996-068833 (1996-12-01), None
patent: 10/1997-0018577 (1997-04-01), None
patent: 10-1997-0019583 (1997-04-01), None
patent: 1997-18583 (1997-04-01), None
patent: 1998-050069 (1998-09-01), None
patent: 1020000027376 (2000-05-01), None
patent: 10-0291182 (2001-07-01), None
patent: 10-2002-7005277 (2002-04-01), None
patent: 2002-0084062 (2002-11-01), None
patent: 1020040055483 (2004-06-01), None
patent: 1020040060410 (2004-07-01), None
patent: WO0141211 (2001-06-01), None
Korean Office Notice to File a Response/Amendment to the Examination Report No. 9-5-2006- 024071163- Date Apr. 27, 2006.
English Translation of Korean Office Notice to File a Response/Amendment to the Examination Report No. 9-5-2006-024071163 Date Apr. 27, 2006.
English translation of the German Patent and Trademark Office dated Dec. 14, 2006 with translation.

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