Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-05-08
2009-10-27
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257S004000, C257SE29002, C438S102000, C438S103000, C365S163000
Reexamination Certificate
active
07608851
ABSTRACT:
A programmable via structure that includes at least two phase change material vias each directly contacting a heating element, the via structure further including a first terminal in contact with a first heating element portion, a second terminal in contact with a second heating element portion, a third terminal in contact with one of the vias, and a fourth terminal in contact with another one of the vias; a first circuit block in contact with one of the third and fourth terminals; a second circuit block in contact with the third or fourth terminal not contacting the first circuit block; a source region of a first transistor in contact with one of the first and second terminals; and a drain region of a second transistor in contact with the first or second terminal that is not contacting the source region of the first transistor.
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U.S. Appl. No. 11/733,523, filed Apr. 10, 2007, issued to Kuan-Neng Chen.
Chen Kuan-Neng
Lam Chung H.
Alexanian Vazken
International Business Machines - Corporation
Pham Thanh V
Scully , Scott, Murphy & Presser, P.C.
Valentine Jami M
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